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Entries Tagged ‘solid state storage’

(PR) HP Collaborates with Hynix to Bring the Memristor to Market in Next-generation Memory

HP today announced that it has entered into a joint development agreement with Hynix Semiconductor Inc., a world-leading memory supplier, to bring memristor, a new circuit element first intentionally demonstrated in HP Labs, to market in future memory products. Memristors require less energy to operate, are faster than present solid-state storage technologies and can retain information even when power is off. The memristor, short for “memory resistor,” was postulated to be the fourth basic circuit element by Prof. Leon Chua of the University of California at Berkeley in 1971 and first intentionally reduced to practice by researchers in HP Labs, the company’s central research arm, in 2006.

Earlier this year, HP announced the discovery that the memristor also can perform logic, showing that memristor-based devices could change the standard paradigm of computing by enabling computation to one day be performed in chips where data is stored, rather than on a specialized central processing unit.

(PR) G.Skill Launches New Phoenix Pro SSDs in 40 GB, 80 GB, and 160 GB Capacities

G.Skill International Co. Ltd., manufacturer of extreme performance memory and solid-state storage with solid quality, has today added three new capacities to its ultra-high performance Phoenix Pro series SSD, including 40GB, 80GB and 160GB models.

Based on the popular SandForce SF-1200 SSD controller that has been tuned to deliver an unparalleled performance in 4k random write speed up to 50,000 IOPS, G.Skill’s Phoenix pro SSD family has been the international award winning drive of choice since its recent debut at Computex 2010.

(PR) Toshiba Introduces Double Data Rate Toggle Mode NAND In MLC And SLC Configurations

Toshiba America Electronic Components, Inc ., (TAEC) is introducing 32 nm double data rate Toggle Mode NAND, in multi-level cell (MLC) versions with densities of 64 Gb, 128 Gb and 256 Gb and single-level cell (SLC) versions with densities of 32 Gb, 64 Gb and 128 Gb. Toggle Mode NAND features a faster interface than conventional or "legacy" asynchronous NAND memory with lower power consumption than competing synchronous DDR NAND product offerings.

Toshiba DDR Toggle Mode 1.0 NAND has a fast interface rated at 133 megatransfers per second (MT/s), compared to 40 MT/s for legacy SLC single data rate NAND, which makes it suitable for high performance solid state storage applications including enterprise storage. Since it uses an asynchronous interface similar to that used in conventional NAND, the Toshiba DDR Toggle Mode NAND requires no clock signal, which means that it uses less power and has a simpler system design compared to competing synchronous NAND alternatives. The DDR interface in Toggle Mode NAND uses a Bidirectional DQS to generate input/output signals (I/Os) using the rising and falling edge of the write erase signal. Toggle Mode NAND also has on-die termination to help achieve less crosstalk.

(PR) G.Skill Releases Ripjaws 48 GB DDR3-1900 MHz Memory Kit for Workstations

G.Skill International Co. Ltd., manufacturer of extreme performance memory and solid-state storage with solid quality, has today released the world’s only hand-picked, hand-tested, ultra-high capacity DDR3 memory kit for workstations: 48GB (4GBx12) of 1,900MHz CL8 1.65V with G.Skill’s popular Ripjaws series heatsink.

Designed exclusively for EVGA’s best in class Super Record 2 (SR-2) motherboard, which features dual Intel Xeon LGA1366 CPU sockets and 12 DDR3 memory slots, G.Skill has been able to match its masterpiece of 48GB DDR3 precisely to this board, making it performance for performance-hungry workstation users. Furthermore, based on G.Skill lab’s internal test results, advanced users capable of understanding sophisticated BIOS adjustments will be able to reach 2,000MHz CL8 with the G.Skill Ripjaws 48GB DDR3 kit.

(PR) G.Skill Launches 24 GB Memory Kit with DDR3-2000 MHz, CAS 8T

G.Skill International Co. Ltd., manufacturer of extreme performance memory and solid-state storage with solid quality, has today released its series of 24GB (4 GB x6) triple channel memory kits at an extreme 2000 MHz, CAS 8T, 1.65V.

G.Skill previously demonstrated 24GB of DDR3 at 2,000MHz CL9 during Computex 2010 earlier this month, but has again managed to push the boundaries. This super capacity kit has already attracted a large number of extreme gamers and professional users who expect higher memory capacity can improve their PC performance. G.Skill has successfully provided 24GB (4GBx6) at 2,000MHz CL8 to another high-end boundary, making it the absolute ultimate choice for the extreme users.

(PR) OCZ Technology Introduces the Enyo USB 3.0 Portable Solid State Drive (SSD)

OCZ Technology Group, Inc., a leading provider of high-performance solid-state drives (SSDs) and memory modules for computing devices and systems, announces the Enyo Portable SSD, utilizing the next generation USB 3.0 interface. The Enyo features all the performance and durability advantages of an internal SSD but delivers portability with an external storage solution for on-the-go users who need to share files between various PC systems.

“We are continually searching for new ways to make the benefits of solid state storage available to consumers, and our new Enyo SSD is designed to make those benefits portable,” said Ryan Petersen, CEO of the OCZ Technology Group. “The Enyo is a sleek external SSD that makes use of the increasingly popular SuperSpeed USB 3.0 interface to make transferring anything from spreadsheets to high definition movies significantly faster than traditional media. Consumers never have to leave home without their valuable files again.”

(PR) G.Skill Launches Sandforce SF-1200 Controller-based Phoenix Series SSDs

G.Skill International Co. Ltd., manufacturer of extreme performance memory and solid-state storage with solid quality, has today released its Phoenix SATA II 2.5″ Solid State Drive based with the latest ultra-high performance SandForce SF-1200 controller.

Since 2009, G.Skill Falcon series of performance SSDs have received numerous awards. So, in order to continually satisfy computer enthusiasts and gamers’ continuing thirst for performance technology, G.Skill has worked with SandForce to integrate its latest technology that provides previously unseen performance, quality and reliability in G.Skill’s Phoenix drive.

(PR) G.Skill Announces Flare DDR3-2000 MHz 4GB Kit for AMD Phenom II Processors

G.Skill International, manufacturer of extreme performance memory and high performance solid-state storage, has today launched the 2,000MHz CL7-9-7-24 1.65V 4GB (2GBx2) DDR3 kit with its latest Flare heatsinks, as the ideal performance partner for AMDs latest 6-core processors.

G.Skill’s Flare series has represented high-performance memory modules for the AMD platform since its first exposure in Cebit 2010, and G.Skill continues its enthusiast commitment in the platform. Now the Flare family brings 2,000MHz to the world of AMD, with the incredible timing of CL7. It provides AMD enthusiasts the perfect choice of high-end memory to make the most of overclocking the latest AMD system.

(PR) G.Skill Releases Flare Series DDR3-1800 MHz Memory for AMD AM3 Platform

G.Skill International Co. Ltd., manufacturer of extreme performance memory and high performance solid-state storage, has today launched its latest Flare series high-performance DDR3 kits rated at 1800MHz, and optimized for AM3 790 & 890 platform with AMD C3 stepping processors.

G.Skill’s Flare series has been specifically designed and tested for AM3 790 and the latest 890 platforms, in combination with AMDs recent C3 stepping CPUs, and has passed a strict testing regime to ensure the best performance and stability. G.Skill Flare provides AMD enthusiasts the perfect choice of high frequency memory that allows a greater attainable CPU bus clock, in order to overclock further and have best performance for productivity and gaming.

ATP Electronics Intros Internal SIP USB Solid State Drive

ATP Electronics released an internal USB solid state storage device. The device sits on one USB internal header cluster on the motherboard (occupying headers for two ports), to provide fixed storage of up to 4 GB in a package that measures 8.2 (L) x 15.3 (W) x 6.2 (H) mm. The package is dust, vibration and ESD resistant. It uses single-level cell (SLC) NAND flash chips, and provides speeds typical to storage devices connected over USB 2.0, around 30 MB/s. The device is said to be industrial-grade, and can be deployed in embedded computers. The package is advertised to be extremely durable, making use of the System In Package (SIP) technology that protects vital components.