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Following reports that Kingston is reducing prices of its NAND flash-based products by up to 15%, SanDisk too is reportedly preparing price-cuts of its own. Unlike Kingston, SanDisk’s entire product portfolio is connected with NAND flash memory, it is …
Memory industry major Kingston is working towards reducing prices of its products that are based on NAND flash memory. This includes a large chunk of Kingston’s product portfolio, as the only products excluded would be DRAM. NAND flash-based products i…
Toshiba Corporation today announced the development of BENAND, a versatile, multi-application single level cell (SLC) NAND flash memory with an embedded error correction code (ECC). BENAND’s diverse applications include LCD TVs and digital cameras alon…
Not waiting on Santa, Cupertino-based Apple Inc. simply went on to give itself a holiday present worth, according to reports, about $500 million. This self-made gift is Anobit, a company based in Israel which is known for developing the MSP (Memory Sig…
Flash buddies Intel and Micron have today announced a significant breakthrough in terms of NAND density, the first 128 Gb (16 GB) MLC NAND memory chip. Manufactured on 20 nm process technology, this 128 Gb chip complies with the ONFI 3.0 specification …
Intel Corporation (Nasdaq:INTC) and Micron Technology, Inc. today expanded their NAND Flash memory joint venture operations with the official opening of IM Flash Singapore. The US$3 billion facility is expected to employ about 1,200 and is currently ra…
Toshiba Corporation, reinforcing its leadership in the development and fabrication of cutting-edge, high density NAND flash memories, today announced that it has fabricated NAND flash memories with 19 nm process technology, the finest level yet achieve…
Intel Corporation and Micron Technology Inc. today introduced a new, finer 20-nanometer (nm) process technology for manufacturing NAND flash memory. The new 20nm process produces an 8-gigabyte (GB) multi-level cell (MLC) NAND flash device, providing a …
Toshiba America Electronic Components, Inc. (TAEC) today announced that it has enhanced its NAND flash portfolio with the introduction of SmartNAND, its next-generation 24-nanometer (nm) NAND flash product family. The SmartNAND series integrates leadin…
The Open NAND Flash Interface (ONFI) Working Group, the organization dedicated to simplifying integration of NAND Flash memory into consumer electronic devices, computing platforms, and industrial systems, today published the new ONFI 3.0 standard. By using the non-volatile DDR2 (NV-DDR2) interface, the newly ratified standard reaches speeds of up to 400 megabytes (MB)/sec, doubling the current NAND interface transfer rates.
The ONFI 3.0 standard details the interface and infrastructure that ONFI’s more than 100 members can employ to develop products that deliver the industry’s fastest NAND interface. Improvements in ONFI 3.0′s NAND interface speeds will also enable future NAND controllers to achieve similar performance with half the number of channels, providing both a cost and space savings, which are key requirements for solid-state drive (SSD) design. The ONFI 3.0 incorporates a sophisticated die selection feature that reduces the number of chip enable (CE) pins, which in turn lowers the number of controller pins making PCB routing more efficient. Reducing the number of CE pins is especially important for SSDs, providing a significant cost reduction and allowing the extra pins to be assigned to other applications within the system.
