Samsung Electronics Co., Ltd., the world leader in advanced memory technology, announced today that it has begun mass producing the industry’s first two-gigabit (Gb) Green DDR3 using 30 nanometer (nm) class process technology.

"We’re seeing a sharp rise in demand for DDR3 chips and are meeting that need with the timely introduction of 30nm-class Green DDR3 solutions," said Soo-In Cho, president, Memory Division, Semiconductor Business, Samsung Electronics. "Thirty nano-class DDR3 DRAM will deliver the most satisfying user experience possible, offering extremely high performance and reduced power consumption for PC and server applications designed to capitalize on new multi-core processors."

Samsung Electronics Co., Ltd., the world leader in advanced semiconductor technology solutions, today announced the industry’s first production of 20 nanometer (nm) class NAND chips for use in Secure Digital (SD) memory cards and embedded memory solutions. Based on this cutting-edge technology, the introduction of 32 gigabit (Gb) MLC NAND will expand the company’s memory card solutions for smart phones, high-end IT applications and high-performance memory cards.

Mr. Soo-In Cho, president, Memory Division, Samsung Electronics, said “In just one year after initiating 30nm-class NAND production, Samsung has made available the next generation node 20nm-class NAND, which exceeds most customers requirements for high-performance, high-density NAND-based solutions.” He added, “The new 20nm-class NAND is not only a significant step forward in process design, but we have incorporated advanced technologies into it to enable substantial performance innovation.”

Samsung Electronics Co., Ltd., the world leader in advanced semiconductor technology solutions, today announced that the industry’s first 30-nanometer-class DRAM has just successfully completed customer evaluations, in two gigabit (Gb) densities. With DDR3 SDRAM becoming the predominant main memory this quarter, Samsung’s aggressive advancement in process technology will raise productivity and expedite dissemination of high performance, 1.5V and 1.35V DDR3 for servers, desktops and notebook PCs.

"Our accelerated development of next generation 30nm-class DRAM should keep us in the most competitive position in the memory market," said Soo-In Cho, president, Memory Division, Samsung Electronics.

Samsung Electronics Co., Ltd., the world leader in advanced semiconductor technology solutions, announced today that it commenced the industry’s first volume production of 3-bit, multi-level-cell (MLC) NAND flash chips using 30-nanometer (nm)-class process technology at the end of November. The chips will be used in NAND flash modules accompanied by exclusive Samsung 3-bit NAND controllers to initially produce eight gigabyte (GB) micro Secure Digital (microSD) cards.

"Introducing cost-efficient, 30nm-class 3-bit technology widens our NAND memory solution base to make NAND even more enticing for increasingly diverse market applications," said Soo-In Cho, executive vice president and general manager of the Memory Division at Samsung Electronics. "Our 3-bit NAND memory will support the development of more cost-competitive, high-density consumer electronics storage solutions," he added.